|
Ihr Zugang zu nationalen und |
|
| Profil Titel | Alignment system for sequential patterning in vacuum |  |
Referenz | 10 ES 28G2 3J1F | |
| Herkunftsland | Spain | |
| Kooperationsart | Angebot | |
| Eintrag/Änderung | 2010-11-04 / 2010-11-04 |
Kurzfassung
A Spanish public research organisation has developed a technology by which substrates and shadow masks, as employed in stencil lithography, can be aligned with precission. Monitoring of the sensor’s output electrical signal yields the amount of material deposited through the stencil, as well as the relative position of the two parts. Partners interested in a patent license are sought.Details
Stencil lithography is a well-known technique for the fabrication/definition of patterns on surfaces. The selective emission or injection of a material for its deposition on a substrate, using a shadow mask to define the zones where the material can be deposited, finds its application in combinatorial material science, the fabrication of devices based on organic materials, or the design of prototypes of nanometric structures. This preparation technique yields clean high purity surfaces, can be employed with a great variety of materials and surfaces, and offers flexibility, high resolution and high throughput possibilities for nanostructure fabrication.Some of these applications, as e.g. the fabrication of nanoelectronic circuits, demand high vacuum conditions and a precise and reproducible alignment between the substrate and the shadow mask to correctly define the structures. The capability of achieving this alignment enables the use of full wafer-sized stencils and substrates in combination with large range, highly accurate XY nanopositioning stages, to perform stencil lithography in a quasi-dynamic approach.
To this end, CSIC has patented a high precission alignment system for stencil lithography that guarantees the correct positioning of shadow mask and substrate. It allows sequential patterning with different masks in vacuum chambers without interruption of the vacuum conditions of the substrate. The system is valid for a great variety of substrates, although it finds its most direct application in thin film evaporation equipment employing metals and dielectric materials to define the patterns. Additionally, it can be installed in ion etching or ion implantation equipments.
For the correct alignment of stencil and substrate, this system uses micrometer-sized apertures perforated on the the stencil and a dedicated high-sensitivity mass sensor with spatial resolution located on the plane of the substrate. By electrical monitoring of the sensor’s resonance frequency, mass deposition can be known in real-time. To control the system a computer or a set of controlers must be employed with the aid of a control interface.
Innovative Aspects:
• The main innovation of the system is the use of a dedicated sensor with spatial resolution.
• Use of dedicated apertures in the membranes of the shadow mask for the alignment.
• Use of dedicated procedures for X,Y position alignment and angular alignment.
Technologiesektor | - Nanotechnologien - Gedruckte Schaltungen und integrierte Schaltkreise - Mikro- und Nanotechnologie |
Anwendungsbereich | - Microprocessors - Circuit boards - Other electronics related equipment |
Entwicklungstand | Development phase - Laboratory tested |
Patentrechte (IPR) | Patent(s) applied for but not yet granted |
| Spanish patent and PCT applied for. | |
Kooperationstyp | - License Agreement # Type of partner sought Industrial. # Specific area of activity of the partner Manufacturers of lithography and deposition equipment. # Task to be performed by the partner sought Bring this technology to a market-ready status. |
Organisationstyp | Research institute/University Größe: > 500 |
| Status | Dieses Profil ist abgelaufen! Falls Sie denoch Interesse haben, kontaktieren Sie uns. |
Möchten Sie mit dieser Firma in Kontakt treten? Ja |
|